Last decades have witnessed the exponential advances of silicon-based nonvolatile optoelectronic memories 5, 6, 7. This advantage enables the great potential of optoelectronic memories in image capturing, confidential information recording, and logic data processing 3, 4, 5. Optoelectronic memories have attracted tremendous attention owing to its unique capability of accumulating and releasing photo-generated carriers under electrical stress and light irradiation 1, 2, 3, 4. The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. The memory demonstrates robustness with retention time over 4.5 × 10 4 s.
The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 10 6, which ensures over 128 (7 bit) distinct storage states. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Optoelectronic memory plays a vital role in modern semiconductor industry.
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